| 1. |
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| 2. |
- Grabowski, Alexander, 1993, et al.
(author)
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Large-Signal Circuit Model for Datacom VCSELs
- 2018
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In: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. ; 2018-September, s. 193-194
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Conference paper (peer-reviewed)abstract
- We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.
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| 3. |
- Jahed, Mehdi, 1988, et al.
(author)
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Precise setting of micro-cavity resonance wavelength by dry etching
- 2019
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In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. - : American Vacuum Society. - 2166-2754 .- 2166-2746. ; 37:3
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Journal article (peer-reviewed)abstract
- With an intracavity phase tuning technique, the authors demonstrate <2 nm precision in wavelength setting of vertical-cavity surface-emitting laser (VCSEL) microresonators in the wavelength range 1040-1070 nm using an Ar ion-beam etching process with subnanometer precision in etch depth. This postgrowth fabrication technique for controlling the wavelength of individual VCSELs is promising for the development of monolithic multiwavelength VCSEL arrays with precisely defined wavelengths for wavelength division multiplexed (WDM) optical interconnects and the assembly of compact and high-capacity WDM transmitters.
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| 4. |
- Juodenas, Mindaugas, 1991, et al.
(author)
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High-angle deflection of metagrating-integrated laser emission for high-contrast microscopy
- 2023
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In: Light: Science and Applications. - 2047-7538 .- 2095-5545. ; 12:1
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Journal article (peer-reviewed)abstract
- Flat metaoptics components are looking to replace classical optics elements and could lead to extremely compact biophotonics devices if integrated with on-chip light sources and detectors. However, using metasurfaces to shape light into wide angular range wavefronts with high efficiency, as is typically required in high-contrast microscopy applications, remains a challenge. Here we demonstrate curved GaAs metagratings integrated on vertical-cavity surface-emitting lasers (VCSELs) that enable on-chip illumination in total internal reflection and dark field microscopy. Based on an unconventional design that circumvents the aspect ratio dependent etching problems in monolithic integration, we demonstrate off-axis emission centred at 60(degrees) in air and 63(degrees) in glass with > 90% and > 70% relative deflection efficiency, respectively. The resulting laser beam is collimated out-of-plane but maintains Gaussian divergence in-plane, resulting in a long and narrow illumination area. We show that metagrating-integrated VCSELs of different kinds can be combined to enable rapid switching between dark-field and total internal reflection illumination. Our approach provides a versatile illumination solution for high-contrast imaging that is compatible with conventional microscopy setups and can be integrated with biophotonics devices, such as portable microscopy, NIR-II range bioimaging, and lab-on-a-chip devices.
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| 5. |
- Kong, D., et al.
(author)
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Single Dark-Pulse Kerr Comb Supporting 1.84 Pbit/s Transmission over 37-Core Fiber
- 2020
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In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. - 1092-8081. ; 2020-May
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Conference paper (peer-reviewed)abstract
- We show that a single dark-pulse Kerr comb can generate high enough OSNR to carry 1.84 Pbit/s data, achieved by 223 WDM spectral lines modulated with 32-Gbaud, SNR-adapted probabilistically shaped DP-QAM, over a 37-core fiber.
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| 6. |
- Lavrencik, Justin, et al.
(author)
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Optimum VCSEL Apertures for High-Speed Multimode Fiber Links
- 2018
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In: 2018 Optical Fiber Communications Conference and Exposition, OFC 2018 - Proceedings. - 9781943580385
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Conference paper (peer-reviewed)abstract
- Cross-correlations of VCSEL transverse mode groups with different apertures are used to predict dispersion dependent RIN. Experiments with wideband multimode fiber confirm the noise enhancement dependence on aperture, which increases with fewer mode VCSELs.
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| 7. |
- Lengyel, Tamas, 1986, et al.
(author)
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Pre-emphasis enabled 50 Gbit/s transmission over 1000 m SMF using a 1060 nm single-mode VCSEL
- 2018
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 54:20, s. 1186-1187
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Journal article (peer-reviewed)abstract
- A single-mode 1060 nm vertical-cavity surface-emitting laser (VCSEL) and single-mode fibre (SMF) based link with two-tap active pre-emphasis enabling error-free transmission of 50 Gbit/s NRZ-OOK over 1000 m is presented.
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| 8. |
- Tibaldi, Alberto, et al.
(author)
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Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green's Function-Drift-Diffusion Approach
- 2020
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In: Physical Review Applied. - 2331-7019. ; 14:2
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Journal article (peer-reviewed)abstract
- This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach, where tunneling is described rigorously with a nonequilibrium Green's function formalism based on a multiband description of the electronic structure. Validated with experimental results, the proposed approach provides a quantum -kinetic perspective of the tunneling process and paves the way toward a comprehensive theory of VCSELs, bridging the gap between semiclassical and quantum simulations.
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| 9. |
- Fu, Ying, et al.
(author)
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Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
- 2006
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100:7
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Journal article (peer-reviewed)abstract
- The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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